摘要
基于实际器件的材料和结构参数,利用ANSYS软件对泵浦用808nm半导体激光器一维线阵列在连续及准连续驱动条件下的稳态及瞬态温度分布进行了模拟和分析,并采用纵模光谱法对稳态热阻进行了测量,实测与模拟结果基本吻合。
Transient and stationary thermal field distribution of 808 nm semiconductor laser arrays in CW and PCW conditions, were simulated by Ansys software, in which the structure parameters were all based on the practical devices. The stationary thermal resistant was also measured by vertical-mode spectrum method, the results were basically coincident with the simulations.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第11期843-846,共4页
Semiconductor Technology
基金
长春光机学院重点实验室基金资助项目(51456030103DZ2302)
