摘要
用高压液封直拉法制备大直径GaP单晶重要的是控制拉制参数,如埚位、氧化硼厚度、热场、晶体坩埚直径比等。实验采用浮舟技术控制晶体直径,调整和控制参数使得晶体固液界面在拉制过程中始终凸向熔体,这对获得单晶非常重要。分析了晶体中电阻率、载流子浓度分布及位错分布。采用X射线双晶衍射对晶体质量进行了测试分析。
Controlling the growth parameters to achieve a single crystal is the importance in high pressure liquid-encapsulated Czochralski（LEC） growth of large diameter GaP crystal. Growth parameters includes： crucible position, B203 encapsulant thickness, heating system, crystal to crucible diameter ratio, etc. Single crystals were grown by coracle technique for controlling diameter in the tests. Testing efforts were focused on adjusting and controlling the growth parameter to keep the solid-liquid interface convex throughout growth. The distribution of resistivity, carriers density and EPD were analyzed. Crystal quality was characterized by X-ray double crystal diffraction.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第11期847-850,共4页
Semiconductor Technology
关键词
液封直拉
浮舟技术
X射线双晶衍射
LEC
coracle technique
X-ray double crystal diffraction
