期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

Effect of crystallization temperature on microstructure and ferroelectric property of Bi_(3.25)Eu_(0.75)Ti_3O_(12) thin films prepared by MOD method 被引量：1

Effect of crystallization temperature on microstructure and ferroelectric property of Bi_(3.25)Eu_(0.75)Ti_3O_(12) thin films prepared by MOD method
下载PDF
导出
摘要 Europium-substituted bismuth titanate (Bi3.25Eu0.75Ti3O12) thin films were deposited on the Pt/Ti/SiO2/Si(111) substrates by metal-organic decomposition (MOD) method using a repeated coating/drying cycle. Effect of crystallization temperature on microstructure of Bi3.25Eu0.75Ti3O12(BET) thin films was investigated by X-ray diffractometry(XRD), scanning electron microscopy (SEM) and Raman spectroscopy, and ferroelectric property was studied by Precision Workstation Ferroelectric Tester. The crystallinity of BET thin films is improved and the average grain size increases with the crystallization temperature from 600 to 750 ℃. Under 9 V applied voltage, the remnant polarization (2Pr) of BET thin films annealed at 700 ℃ is 50.7 μm/cm2, which is higher than that of the films annealed at 600, 650 and 750℃. Europium-substituted bismuth titanate （Bi3.25EU0.75Ti3O12） thin films were deposited on the Pt/Ti/SiO2/Si（111） substrates by metal-organic decomposition （MOD） method using a repeated coating/drying cycle. Effect of crystallization temperature on mierostructure of Bi3.25Eu0.75Ti3O12 （BET） thin films was investigated by X-ray diffractometry（XRD）, scanning electron microscopy （SEM） and Raman spectroscopy, and ferroelectric property was studied by Precision Workstation Ferroelectric Tester. The crystallinity of BET thin films is improved and the average grain size increases with the crystallization temperature from 600 to 750 ℃. Under 9 V applied voltage, the remnant polarization （2Pt） of BET thin films annealed at 700 ℃ is 50.7 μm/cm^2, which is higher than that of the films annealed at 600, 650 and 750℃
作者 何林 张彤 唐明华 邓水凤
机构地区 Faculty of Material and Photoelectronic Physics Key Laboratory for Advanced Materials and Rheological Properties College of Electronic Science and Engineering
出处 《中国有色金属学会会刊：英文版》 CSCD 2006年第5期1154-1158,共5页 Transactions of Nonferrous Metals Society of China
基金 Project(10472099) supported by the National Natural Science Foundation of China Project(05JJ30208) supported by the Natural Science Foundation of Hunan Province, China Project(05FJ2005) supported by Key Project of Scientific and Technological Department of Hunan Province, China
关键词 BET薄膜 铁电性能 金属有机分解 钙钛矿 MOD BET thin film ferroelectric property metal-organic decomposition Bi-layered perovskite
分类号 TB383.2 [一般工业技术—材料科学与工程]
  • 相关文献

参考文献18

  • 1ZHENG X J, ZHOU Y C, ZHONG H. Dependence of fracture toughness on annealing temperature in PZT thin films produced by metal organic decomposition [J]. Journal of Materials Research, 2003,18(3): 578-584.
  • 2ZHENG X J, LI J Y, ZHOU Y C. X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition[J]. Acta Mater, 2004, 52(11): 3313-3332.
  • 3ZHENG X J, ZHOU Y C, LI J Y. Nano-indentation fracture test of Pb(Zr0.52Ti0.48)O3 ferroelectric thin films [J]. Acta Mater, 2003, 51:3985-3997.
  • 4LEE H N, HESSE D, ZAKHAROV N, GOSELE U. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform α-axis orientation on silicon substrates [J]. Science, 2002, 296:2006-2009.
  • 5CHON U, YI G C, JANG H M. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3Oi2 thin films grown on Pt/T/SiP2/si(100) by metalorganic solution decomposition [J]. Phys Rev Lett, 2001, 78:658-660.
  • 6CHON U, SHIM J S, JANG H M. Fcrroclectric properties and crystal structure of praseodymium-modified bismuth titanate [J]. J Appl Phys, 2003, 93: 4769-4775.
  • 7KIM K T, KIM C I. Characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by metal organic decomposition method [J]. Thin Solid Films, 2005, 478: 6-12.
  • 8CHON U, KIM K B, JANG H M, YI G C. Fatigue-free samarium-modified bismuth titanate Bi4-xSmxTi3O12 film capacitors having large spontaneous polarizations [J]. Appl Phys Lett, 2001, 79:3137-3139.
  • 9MELGAREJO R E, TOMAR M S, BHASKAR S, DOBAL P S,KATIYAR R S. Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process [J]. Appl Phys Lett, 2002, 81:2611-2613.
  • 10GARG A, BARBER Z H, DAWBER M, SCOTT J F, SNEDDEN A,LIGHTFOOT P. Orieatation dependeace of ferroelectric properties of pulsed-laser-ablated Bi4-xNdxTi3O12 films [J]. Appl Phys Lett,2003, 83: 2414-2416.

同被引文献20

  • 1成传品,唐明华,叶志,周益春,郑学军,钟向丽,胡增顺.Ferroelectric properties of dysprosium-doped Bi_4Ti_3O_(12) thin films crystallized in various atmospheres[J].中国有色金属学会会刊：英文版,2006,16(B01):33-36. 被引量：1
  • 2WU C H,CHU J P,WANG S F,LIN T N,CHANG W Z,JOHN V S.Effects of post annealing on the material characteristics and electrical properties of La doped BaTiO3 sputtered films. Surface and Coatings Technology . 2008
  • 3TANG M H,ZHOU Y C,ZHENG X J,YAN Z,CHENG C P,YE Z,HU Z S.Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure. Solid State Electronics . 2007
  • 4HOZER L.Semiconductor ceramics: grain boundary effects. . 1994
  • 5ISUPOV V A.Ferroelectric Na0.5Bi0.5TiO3 and K0.5Bi0.5TiO3 perovskites and their solid solutions. Ferroelectrics . 2005
  • 6ZHENG X J,HE L,TANG M H,MA Y,WANG J B,WANG Q M.Enhancement of fatigue endurance and retention characteristic in Bi3.25Eu0.75Ti3O12 thin films. Materials Letters . 2008
  • 7HE H Y,HUANG J F,CAO L Y.Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process. Materials Science and Engineering . 2006
  • 8GUO Y P,AKAI D,SAWADA K,ISHIDA M,GU M Y.Structure and electrical properties of trilayered BaTiO3/ (Na0.5Bi0.5)TiO3-BaTiO3/BaTiO3 thin films deposited on Si substrate. Solid State Communications . 2009
  • 9CHOPRA S,SHARMA S,GOEL T C,MENDIRATT A.Effect of annealing temperature on microstructure of chemically deposited calcium modified lead titanate thin film. Applied Surface Science . 2004
  • 10ZHU X H,ZHENG D N,ZENG H,PENG W,ZHU J G,YUAN X W,YONG L P,MIAO J,LI J,TIAN H Y,XU X P.Effects of growth temperature and film thickness on the electrical properties of Ba0.7Sr0.3TiO3 thin films grown on platinized silicon substrates by pulsed laser deposition. Thin Solid films . 2006

引证文献1

二级引证文献1

中国有色金属学会会刊：英文版
2006年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部