三元多硒化物的微波溶剂热合成及其结构

Preparation of ternary selenide by microwave solvothermal technique and its structure

以微波溶剂热法制备纳米晶粉体Ag8SnSe6,通过X射线粉末衍射、透射电子显微镜和X射线光电子能谱等手段表征其组成。实验考察了超声波辐照、合成时间和有机溶剂填充度等条件对其产率和粒径的影响。探讨了微波溶剂热法合成纳米晶的机理。漫反射紫外可见吸收光谱(UV-Vis)表明其禁带宽度为2.14 eV,具有优良的半导体性能。

The nanocrystalline Ag8SnSe6 was prepared by microwave solvothermal technique. Several techniques such as XRD, TEM and XPS were used to characterize its composition. The effect of ultrasonic radiation, reaction time and organic solvent＇s tamping degree on product＇s yield and size was investigated, the mechanism of the formation of nanocrystalline was discussed. UV-Vis analysis indicates that this compound is preferable semiconductor with a band gap of 2.14 eV.