脉冲电阳极腐蚀纳米多孔硅的蓝光发射

BLUE PHOTOLUMINESCENCE OF ANODE ETCHED nm POROUS Si FORMED BY SQUARE IMPULSES CURRENT

用直流叠加方波脉冲电流阳极腐蚀法制得了多孔硅（ＰＳ），样品经ＸｅＣｌ准分子激光器的３０８ｎｍ激光的激发，获得了中心波长为４６２ｎｍ、半高宽为１２６ｎｍ的蓝色光致发光（ＰＬ）谱．ＰＳ断面的透射电镜（ＴＥＭ）分析发现有ｎｍ量级的Ｓｉ原子团组成的一维量子线（柱）阵列和三维量子海棉结构．

In this paper, we have studied the blue photoluminescence of nm porous Si(PS), which were formed on n type silicon wafere with 10Ω·cm resistivity. The anodization was carried out in HF etch solution(HF(40Wt%)∶C 2H 5OH=2∶3) at a DC square impulses current density of 5 mA·cm -2 for 20min. Transmission electron microscope analysis showed that the microstructure of nm PS looks like a quantum sponge and quantum wirelike structure.