摘要
GaAsMESFET微波功率放大器工作在脉冲周期状态下,由于自热效应,在很短的时间内(100μs数量级),芯片沟道温度可能产生十几度甚至几十度的变化,这种剧烈的温度变化导致功放性能的变化也是不能忽略的。本文通过建立、求解热扩散方程及能量平衡方程,建立起沟道温度的一维瞬态热模型。
The temperature of chip channel rise in the GaAs MESFET microwave power amplifier which acts as pulse working state is sharp as the reason of self-heating effect. So the effect for the performance of the microwave power amplifier cannot be ignored as the sharp variety of temperature. The 1-D transient-state thermal model of microwave power amplifier is built in this paper by building and resolving the thermal diffusion equation and energy balance equation
出处
《电子测量技术》
2006年第5期51-54,共4页
Electronic Measurement Technology
