期刊文献+

薄膜体声波滤波器的材料、设计及应用 被引量:5

Materials, Devices Design and Applications of Thin Film Bulk Acoustic Wave Filters
下载PDF
导出
摘要 薄膜体声波谐振器及滤波器具有工作频率高、工艺简单、尺寸小、易于集成等优点,成为目前应用于高频通信前置滤波器的首选。系统介绍了用于薄膜体声波谐振器的几种主要材料(AlN、ZnO、PZT)的具体特点、制备工艺及薄膜体声波谐振器与滤波器的结构、设计及其应用。 Film bulk acoustic resonators (FBAR) and BAW filters have many advantages, such as high operation frequency, being small in size and easy for fabrication and integration, and so on. It becomes fit for modern communication applications. The properties and fabrications of some major materials for FBAR such as AlN, ZnO, PZT are introduced systematically, and the structures, devices design and applications of BAW filters are discussed as well.
出处 《材料导报》 EI CAS CSCD 北大核心 2006年第11期21-24,共4页 Materials Reports
基金 四川省青年基金(JS0303001)资助项目
关键词 体声波 谐振器 滤波器 压电薄膜 BAW, resonator, filter, piezoelectric thin films
  • 相关文献

参考文献24

  • 1何世堂,许钊庚.声表面波低插损滤波器研究进展[J].声学技术,1999,18(A11):5-8. 被引量:2
  • 2Morkner H,Roby R,et al.An integrated FBAR filter and PHEMT switched-amp for wireless applications.IEEE Microwave Symp Digest,1999,4:1393
  • 3刘燕翔,任天令,刘理天.PZT材料在射频滤波器中的应用[J].固体电子学研究与进展,2002,22(2):149-152. 被引量:6
  • 4Roman Lanz,Patrick Carazzetti,et al.Surface micromachined BAW resonators based on AlN.IEEE Ultrasonics Symp,2002,1:981
  • 5Robert Weiger,et al.Microwave acoustic materials,devices and applications.IEEE,2002,3:738
  • 6Cong Peng,Liu Litian,et al.Study of BAW filter using surface micromachining.IEEE,2001,2:839
  • 7Cong Peng,Liu Litian,et al.A novel piezoelectric-based RF BAW filter.Microelec Eng,2003,66:779
  • 8丛鹏,刘燕翔,任天令,刘理天.基于硅表面加工工艺的射频体声波滤波器研究[J].压电与声光,2002,24(1):1-3. 被引量:3
  • 9Robert Aigner.RF-MEMS filters manufactured on silicon:Key facts about BAW technology.IEEE,2003:157
  • 10Lobl H P,Klee M,et al.Piezoelectric thin AlN films for BAW resonators.Mater Chem Phys,2003,79:143

二级参考文献15

  • 1饶韫华,刘梅冬,卢春如,王培英,吴国安,曾亦可.溶胶-凝胶方法制备PZT铁电薄膜材料的研究[J].功能材料,1994,25(6):539-541. 被引量:6
  • 2[1]LUTSKY J J,NAIK R S,REIF R,et al.A sealed cavity TFR process for RF bandpass filters[C].Proceedings of the International Electrical Device Meeting,1996:441-444.
  • 3[2]LUKACS M,OLDING T,SAYER M,et al.Thickness mode resonance of PZT coatings on a substrate[C].Mat Res Soc Symp Proc,1998,493:397-402.
  • 4[3]NAIK R S,LUTSKY J J,RAIF R,et al.Measurements of the bulk c-axis electromechanical coupling constant as a function of AlN film quality[J].IEEE Trans Ultrason Ferroelect Freq Contr,2000,47(1):292-296.
  • 5[4]HANAJIMA N,TSUTSUMI S,YONEZAWA T,et al.Ultrasonic properties of lead zirconate titanate thin films in UHF-SHF range[J].Jpn J Appl Phys,1997,36(9B):6 069-6 072.
  • 6[1]Lutsky J J, Naik R S, Reif R, et al. A sealed cavity TFR process for RF bandpass filters. Proceedings of the International Electrical Device Metting, 1996:441
  • 7[2]Du Xiao-Hong, Belegundu Uma, Uchino Kenji. Crystal orientation dependence of peizoelectric properties in lead zirconate titanate: Theoretical expectation for thin films. Jpn J Appl Phys, 1997;36: 5580
  • 8[3]Hu H, Peng C J, Krupanidhi S B. Effect of heating rate on the crystallization behavior of amorphous PZT thin films. Thin Solid Films,1993;223:327
  • 9[4]Hiboux S, Muralt P. Piezoelectric and dielectric pro-perties of sputter deposited(111), (100) and random-textured Pb(ZrxTi1-x)O3(PZT) thin films. Ferroelectrics,1999;224:315
  • 10NAIK R S, LUTSKY J J, REIF R,et al. Measurements of the bulk, c-axis electromechanical coupling constant as function of A1N film quality [J]. IEEE Transactions on Ultrasonics, Ferroelectrics,and Frequency Control, 2000,47 (1): 292-296.

共引文献24

同被引文献33

引证文献5

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部