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The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 (A=Pr, Nd) thin film

The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 (A=Pr, Nd) thin film
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摘要 The epitaxial (single crystal-like) Pr0.4La0.1Sr0.5MnO3 (PLSMO) and Nd0.35La0.15Sr0.5MnO3 (NLSMO) thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature (To) in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions. The epitaxial (single crystal-like) Pr0.4La0.1Sr0.5MnO3 (PLSMO) and Nd0.35La0.15Sr0.5MnO3 (NLSMO) thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature (To) in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第11期2724-2730,共7页 中国物理B(英文版)
基金 Project supported by the State Key Development Program for Basic Research of China (Grant No TG1998061406) and the National Natural Science Foundation of China (Grant No 90206019).
关键词 EPITAXIAL POLYCRYSTALLINE thin film electric and magnetic phase transition epitaxial, polycrystalline, thin film, electric and magnetic phase transition
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