期刊文献+

一种低压低温漂的CMOS带隙基准源 被引量:2

A Curvature-Corrected CMOS Bandgap Reference
下载PDF
导出
摘要 基于标准0.35umCMOS工艺,采用一级温度补偿电压作为温度曲率校正电压,与传统采用PTAT电压作为温度曲率校正电压相比,获得了一个电路结构简单,性能更好的带隙基准源。使用Hspice进行仿真,仿真结果表明电路可以在-20-100℃范围内,平均温度系数约2ppm/℃,工作电压为1V左右,获得了一个高性能的带隙基准电压源。该带隙基准源可应用于高精度模数转换器(ADC)、数模转换器(DAC)和系统集成芯片(SOC)中。 The design of curvature correction temperature compensation bandgap reference circuit use the first order temperature compensation bandgap reference voltage as a curvature voltage.and get a better circuit than usually use a PTAP voltage as a curvature voltage,which is fabricated with 0.35um CMOS technology, The bandgap reference has a average temperature coefficient of 2ppm/℃, and a power supply rejection ratio of -90dB.
出处 《微计算机信息》 北大核心 2006年第11Z期304-306,共3页 Control & Automation
基金 军事电子预研基金项目(编号不公开)
关键词 带隙基准源 曲率校正 温度系数 电源抑制比 Bandgap Reference,Curvature Correction,CT,PSRR
  • 相关文献

参考文献4

  • 1Behzad Razavi.模拟CMOS集成电路设计[M].西安交通大学出版社,2000.309—329.
  • 2Andrea Boni. "Op-Amps and Startup Circuits for CMOS Bandgap Reference with Near 1-V Supply".IEEE J.Solid-State Circuits,vol.37,pp 1339-1343,Oct 2002.
  • 3Hironori Banba, Hitoshi Shiga, Akira Umezawa, Takeshi Miyaba etc"A CMOS Bandgap Reference Circuit with Sub-1-VOperation".IEEE J.Solid-State Circuits,vol.34,pp 670 - 674 May 1999.
  • 4周耀,汪西川,陈光明.一种采用曲率补偿技术的高精度带隙基准电压源的设计[J].微计算机信息,2004,20(12):104-105. 被引量:8

二级参考文献3

  • 1M Gunawan, G Meijer, J Fonderie, and H. Huijsing. A curvature corrected low-voltage bandgap reference, [J] IEEE Solid-State Circuits,vol. 28, pp. 667-670, June 1993.
  • 2Song B. S and. Gray. P. R A precision curvature-compensated CMOS band gap reference,[J] IEEE Solid-State Circuits, vol. 18, pp. 634-643,Dec. 1983.
  • 3Gray P R, Meyer R G.. Analysis and design of analog integrated circuits [J] 1993,327-347.

共引文献8

同被引文献12

  • 1李红宝,胡刚毅,胡永贵,余金峰.一种用于负LDO稳压器的高精度带隙基准源[J].微电子学,2006,36(6):754-758. 被引量:2
  • 2马超,刘永根,薛卫东,张波.一种高温段指数曲率补偿电压基准源[J].微电子学,2007,37(3):436-439. 被引量:9
  • 3RAZAVI B.模拟CMOS 集成电路设计[M].北京:清华大学出版社,2005:309-329.
  • 4LEUNG K N,MOK P K T,LEUNG C Y.A 2-V 23 μA 5.3 ppm/℃ curvature-compensated MOS bandgap voltage reference[J].IEEE J Sol Sta Circ,2003,38(3):561-564.
  • 5Philip K T. Mok, Ka Nang Leung. Design Considerations of Recent Advanced Low-Voltage Low-Temperature-Coefficient CMOS Bandgap Voltage Reference]A]. IEEE 2004 Custom Integrated Circuits Conference. Orlando[C], Florido, USA: IEEE 2004, 635-642.
  • 6Tsividis Y. Accurate Analysis of Temperature Effects[inj]. Characteristics with Application to Bandgap Reference Sources IEEE J.Solid-State Circuits. 1980, 15 (6): 1076-1084.
  • 7Rincon-Mora G A. Voltage References From Diodes to Precision High-Order Bandgap Circuits[M]. Wiley IEEE Press. 2002, 1-168.
  • 8Banba H,Shiga H,Umezawa A. A cmos bandgap reference circuit with sub-l-v operation soli-state circuits. May 1999,34, 670-674
  • 9Malcoati P, Maloberti F,Fiocchi C and Pruzzi M. Curvaturecompensated BiCMOS bandgap with 1-V supply voltage [J].IEEE J.SolidState Circuits,July 2001,36:1076-1081
  • 10幸新鹏,李冬梅,王志华.CMOS带隙基准源研究现状[J].微电子学,2008,38(1):57-63. 被引量:42

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部