Au/Ge/SiO_2/p-Si结构中的电流输运特性

Carrier transport property of Au/Ge/SiO_2/p-Si structure

用射频磁控溅射双靶交替淀积的方法在p-Si(100)衬底上制备了Ge/SiO2薄膜,利用Au/Ge/SiO2/p-Si结构的I-V特性曲线研究了该结构的电流输运机制.分析表明,在较低的正向偏压和反向偏压下,电流输运机制分别为Schottky发射和欧姆输运电流;而在较高的正向偏压下,Frenkel-Poole发射和空间电荷限制电流两种机制共同作用.

Ge/SiO2 film is deposited on p-Si （100）substrate by two-target alternation RF magnetron sputtering technique. Carrier transport mechanism of Au/Ge/SiO2/p-Si structure is studied by using its I-V curve. The analysis shows that Schottky emission mechanism and ohmic conduction contribute to the current in the film under the lower forward biases and the lower reverse biases respectively, while the current is induced mainly by Frenkel-Poole emission mechanism and space-charge-limited current under the higher forward biases.