碲镉汞深微台面列阵干法隔离的轮廓研究

The Study on the Profile of HgCdTe Micro-mesa Arrays Isolated by Dry-etch Process

文章报道了碲镉汞(HgCdTe)深微台面列阵干法隔离的轮廓研究的初步结果。采用诱导耦合等离子体(ICP)增强反应离子刻蚀(R IE)技术获得的HgCdTe深微台面列阵,在金刚刀解理后,通过扫描电子显微镜(SEM)观察了其干法刻蚀图形的剖面轮廓。进一步研究了刻蚀时间和刻蚀槽开口宽度对刻蚀图形轮廓的影响,获得了一些有助于深微台面芯片工艺设计的实验结果。

Some research results of the profile of HgCdTe micro-mesa arrays isolated by dry-etch process are presented. The HgCdTe （mercury cadmium telluride） micro-mesa arrays, which were formed by employing inductive coupled plasma （ICP） enhanced reactive ion etching （RIE） technique, were cleaved into halves using diamond glass cutter. The influence of etch time and open width of etch trench on HgCdTe micro-mesa arrays was studied by observ- ing the cross-section profile of the isolated arrays with scanning electron microscopy （SEM）. Finally, many results desirable for the design of deep micro-mesa detector arrays were achieved.