材料结构对AlGaN基分布布拉格反射镜特性的影响

The Effects of Material Structures on Characteristics of AlGaN DBRs

采用低压MOCVD技术生长了A lGaN/GaN、A lGaN/A lN等多种交替生长结构的半导体多层膜分布布拉格反射镜(DBR)。利用X射线衍射、扫描电子显微镜(SEM)、原子力显微镜(AFM)等测量手段对材料的物理特性进行了分析表征。结果表明,材料结构对DBR的性能影响很大。通过材料的优化生长,获得了反射率高达93.5%、中心波长和发射率都接近理论值的A lGaN/A lN DBR材料。

The AlxGa1-x N/GaN, AlxGa1-x N/AlN muhilayer stacks materials system distributed Bragg reflectors （DBR） have been successfully produced by MOCVD on （0001）oriented sapphire. The refleetivity of the DBR is as high as 93.5% o The surface of the AlN/AlGaN DBR is found to grow in quasi-two-dimensional （2D） mode. The DBR has very smooth surface and the interface is distinct.