摘要
采用射频磁控技术和退火处理制备掺Al的纳米Si-SiO_2复合薄膜。通过X射线衍射(XRD)、X射线光电子能谱(XPS)和傅里叶变换红外光谱(FT- IR)表征了薄膜的结构,组分和成键情况。掺Al在SiO_2中造成氧空位,使薄膜光致发光强度增强,并出现新的发光峰。退火温度对掺Al薄膜的光致发光的峰位和峰强有较大影响。
Al-doped nc-Si-SiO2 composite films were prepared by r. f. magnetron sputtering and annealing. The structure, composition and bond formation of the films were characterized by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). Al-doping produced oxygen vacancies in SiO2, thus increased PL intensity and formed new PL peaks. Annealing temperature affects the peak position and the intensity of PL.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第11期1706-1708,共3页
Journal of Functional Materials
基金
国家自然科学基金重点资助项目(60336010)