MEMS微器件用CoNiMnP永磁体薄膜的工艺制备和性能研究

Fabrication and properties of the CoNiMnP permanent magnet arrays for MEMS devices

研究了采用多种氯化物体系电沉积制备CoNiMnP永磁体薄膜及在微继电器、电磁驱动器永磁体阵列器件方面的应用。对薄膜组成、磁性能的对比研究表明：从稀氯化物体系(200mT)中获得的Co_(82．4) Ni_(11．9)Mn_(0．4)P_(5．3)永磁体薄膜具有最好的磁性能：H_c= 208790A/m,B_r=0．2T,(BH)_(max)=10．15kJ/m^3,且脆性小、内应力较低。进一步解析发现这可能是因为与易磁化轴相平行的Co(110)面上存在织构所致。在此基础上采用掩膜电沉积技术成功地制备出微继电器原位制造和电磁驱动器永磁体薄膜阵列。

Permanent CoNiMnP thin film is electrodeposited though several chloride solution, which is potential for microrelay,electromagnetic actuator and permanent magnet array in the field of micro-electro-mechanical system （MEMS）. Such parameters of the thin films as its composition, magnetic property,crystal texture,fragility and stress are under study. Results show that the Co82.4 Ni11.9 Mn0.4 P5.3, which is prepared from low concentration chloride bath （200mT）, demonstrates the most magnetic properties with coercivity 208790A/m, remanence 0.20T and maximum magnetic energy 10.15kJ/m^3. Moreover,the fragility and stress are controlled to an acceptable degree. The abovementioned good performance of Co82.4 Ni11.9 Mn0.4 P5.3 thin film is attributed to the texture of the （110） crystal plane,which is parallel to its easy axis. Through microlithography,the electrodeposited CoNiMnP is applied to microrelay and electromagnetic microactuator based on permanent array.