CdS半导体纳米晶的生长及其光谱研究

Preparation of CdS semiconductor nanocrystalline and spectral properties

用玻璃沉淀技术制备了含过饱和CdS的玻璃固溶体,在一定条件下晶化处理使其长出CdS量子点,并采用了X射线衍射、高分辨扫描电镜、光吸收谱和荧光发光光谱等测试手段分析其性能,结果表明经过晶化处理可以在玻璃中长出CdS量子点,尺寸大约为10～25nm．吸收谱中出现明显的红移现象,反映出量子点的量子限域效应,荧光发光图谱中可以看出量子点发光主要由带隙发光和表面缺陷态发光组成,提高热处理温度可以改善晶粒的完整性。

The CdS quantum dots （QDs） were synthesized through glass precipitation ot the oversaturation CdS solid solution then annealing under the certain condition to produce the CdS QDs. Structural and morphology characterization by X-ray diffraction （XRD） and high resolution scanning electron microscope （HRSEM） show that the dots are growth in glass substrate with diameter 10-25nm. Quantum confinement in CdS QDs doped glass samples was demonstrated by absorption spectra. The fluorescence spectra exhibit well-defined peaks associated with band-edge luminescence and recombination at defects.