铝掺杂对非晶SiO_x薄膜电致发光的影响

Influence of Al-doping on electroluminescence from amorphous SiO_x thin films

为提高硅基薄膜(S iOx)发光材料的发光效率,采用双离子束溅射法制备了不同铝含量的A l-S i-S iO2薄膜。对所制备样品的电致发光(EL)测试表明:由于金属(A l)的掺入,使得在同样的电压下,薄膜中的电流随着铝含量的增加而增加;并且铝含量增大使得通过薄膜的电流增强,因而得到较高强度的电致发光。所以当硅基薄膜中掺入铝时,薄膜的发光效率得以提高;并且,随着铝含量的增加,薄膜的发光效率亦相应提高。

To improve the luminescence efficiency/intensity, the SiOx films containing aluminum grains were prepared by du al ion beam sputtering process with a composite target in argon atmosphere. The surface area of total Al layer can be changed to adjust the content of Al in the film. Under forward bias, the EL spectra are found to have a luminescence band peaked at 510 nm of Al-Si-SiO2 films, which originates mainly from the luminescence centers of some defects in the SiOx. Compared to Si-SiO2 films, the EL spectra of Al-Si-SiOx films show that the onset of the bias obviously decreases with the EL efficiency/ intensity increase and EL can also be observed under reverse bias when the content of Al is sufficient in the film.