摘要
在EEHEMT1模型的基础上给出一种新的AlGaN/GaN HEMT半经验直流特性模型,考虑了栅源电压对膝点电压的影响,得到描述AlGaN/GaN HEMT器件I-V特性的方程.此模型可以应用于蓝宝石和SiC两种不同衬底AlGaN/GaN HEMT器件的I-V特性模拟.仿真结果和实验测量结果拟合误差小于3%.
A new AlGaN/GaN HEMT semiempirical DC model is given. This is the first model that takes into account the effect of the gate source voltages Vgs on the knee voltage. Functions describing the DC characteristic of the AlGaN/GaN HEMT are obtained. The model can be used to model the DC characteristic of AlGaN/GaN HEMTs based on sapphire as well as SiC. The error between results simulated by the model and the measured results is less than 3%.
