摘要
采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析,结果表明槽栅器件能够有效地抑制短沟道及热载流子效应,而拐角效应是槽栅器件优于平面器件特性更加稳定的原因.对自对准工艺下成功投片所得沟道长度为140nm的槽栅器件进行测量,结果有力地证明了槽栅器件较平面器件的优越性.
The grooveand planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO, and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects. From the analysis of the field,we find that due to the corner effect,the performance of groove-gate MOSFETs is better than that of the planar. The groove-gate MOSFETs with 140nm channel length fabricated with a self-aligned process are tested,and the results effectively show the superiority of the groove-gate MOSFETs over the planar.
基金
国家自然科学基金(批准号:60376024)
国家高技术研究发展计划(批准号:2003AA1Z1630)资助项目~~
关键词
自对准
槽栅器件
短沟道效应
热载流子效应
拐角效应
self-aligned
groove-gate MOSFETs
short channel effects
hot carries effects
corner effect
