期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

应变Si_(1-x)Ge_xpMOSFET反型沟道空穴低场迁移率模型 被引量：3

A Low-Field Hole Mobility Model of Strained Si_(1-x)Ge_x pMOSFET
下载PDF
导出
摘要 在考虑应变对SiGe合金能带结构参数影响的基础上,提出了一个半经验的应变Si1-xGex/Si pMOSFET反型沟道空穴迁移率模型.在该模型中,给出了迁移率随应变的变化,并且考虑了界面陷阱电荷对载流子的库仑散射作用.利用该模型对室温下空穴迁移率随应变的变化及影响空穴迁移率的因素进行了分析讨论. A semi-experienced low-field hole mobility model of a strained Si1-xGex/Si pMOSFET is proposed by considering the effect of the strain on the energy-band structure of SiGe alloy. This model includes the variation of mobility with strain （Ge content） and the coulomb-scattering mechanism of interface-trapped charges on inversion carriers. Using the model,the change of the hole mobility with strain （Ge content） is simulated at room temperature,and the influence of some factors on mobility is discussed.
作者 张雪锋 徐静平 邹晓 张兰君
机构地区 华中科技大学电子科学与技术系
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第11期2000-2004,共5页 半导体学报（英文版）
基金 国家自然科学基金资助项目(批准号:60576021)~~
关键词 P-MOSFET 应变Sil Gex 空穴迁移率 p-MOSFET strained Si1-xGex hole mobility
分类号 TN386.1 [电子电信—物理电子学]
  • 相关文献

参考文献15

  • 1Hinckley J M,Singh J.Hole transport theory in pseudomorphic Si1-xGex alloys grown on Si(001) substrate.Phys Rev B,1990,41(5):2912
  • 2Briggs P J,Walker A B,Herbert D C.Calculation of hole mobilities in relaxed and strained SiGe by Monte Carlo simulation.Semicond Sci Technol,1998,13(7):680
  • 3Mishima T,Fredriksz C W,Walle G,et al.Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems.Appl Phys Lett,1990,57 (24):2567
  • 4Emeleus C J,Whall T E,Smith D W,et al.Hole transport in Si0.8 Ge0.2 quantum wells at low temperatures.Thin Solid Films,1992,222(1/2):24
  • 5Yang L F,Watling J R,Wilkins R C W,et al.Si/SiGe heterostructure parameters for device simulations.Semicond Sci Technol,2004,19(10):1174
  • 6Laikhtman B,Kiehl R A.Theoretical hole mobility in a narrow Si/SiGe quantum well.Phys Rev B,1993,47 (16):10515
  • 7Chun S K,Wang K L.Effective mass and mobility of holes in strained Si1-xGex layers on (001) Si1-yGey substrate.IEEE Trans Electron Devices,1992,39 (9):2153
  • 8徐静平,吴海平,黎沛涛,韩弼.SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J].Journal of Semiconductors,2004,25(2):200-205. 被引量：4
  • 9Powell S K,Goldsman N,McGarrity J M,et al.Physicsbased modeling and characterization of 6H-silicon-carbide metal-oxide-semiconductor field-effect transistors.J Appl Phys,2002,92:4053
  • 10Huang C C,Yeo Y C,Chen S C,et al.Design and integration of strained SiGe/Si hetero-structure CMOS transistor.IEEE VLSI-TSA-International Symposium on VLSI TechnologyVLSI-TSA-TECH,Proceedings of Technical Papers,2005:23

二级参考文献2

共引文献3

同被引文献36

  • 1何开全,谭开洲,李荣强.高性能模拟集成电路工艺技术[J].微电子学,2004,34(4):398-401. 被引量：7
  • 2王界平,王清平,苏韧,刘先锋.高频互补双极工艺探析[J].微电子学,1995,25(5):14-18. 被引量：2
  • 3王界平,王清平.SOI全介质隔离与高频互补双极兼容工艺[J].微电子学,1996,26(3):150-152. 被引量：1
  • 4高峰,刘玉奎,刘勇.宽电压A/D、D/A转换器用BiCMOS工艺技术研究[J].微电子学,2007,37(1):20-23. 被引量：3
  • 5BROKAW A P. A monolithic 10-bit A/D converter using I^2L and LWT thin-film resistors [J]. IEEE J Sol Sta Circ, 1978, 13(6): 736-745.
  • 6DAVIS C, BAJOR G, BUTLER J, et al. UHF-I: a high-speed process on SO1[C] // IEEE Bip Circ and Technol Meet. Minneapolis, MN, USA. 1992: 260- 263.
  • 7RIM K, ANDERSON R, BOYD D. Strained SiCMOS (SS CMOS) technology: opportunities and challenges [J].Sol Sta Elec, 2003, 47(7): 1133-1139.
  • 8GHANI T, ARMSTRONG M, AUTH C. A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors [C] // IEDM Tech Dig. Washington D C, USA. 2003: 978-980.
  • 9THOMPSON S E, ARMSTRONG M, AUTH C. A 90 nm logic technology featuring strained-silicon [J]. IEEE Trans Elec Dev, 2004, 51(11): 1790-1797.
  • 10KUBO M, MASUDA I, MIYATA K, et al. Perspective on BiCMOS VLSI[J]. IEEE J Sol Sta Circ,1988, 23(1): 5-11.

引证文献3

二级引证文献3

Journal of Semiconductors
2006年 第11期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部