PLD方法制备ZnO薄膜的特征温度研究

The research of characteristic temperature of fabricating ZnO films on Si(1 1 1) substrates by PLD

用PLD方法在S i(1 1 1)衬底上制备了ZnO薄膜.在薄膜的沉积过程中,用安装在激光脉冲沉积设备上的反射高能电子衍射仪(RHEED)对薄膜的生长进行了原位监测.结合薄膜的X射线衍射(XRD)分析和荧光光谱(PL)分析,发现达到或者超过650°C时生长的薄膜,结构和光学特性得到了显著的改善.

ZnO thin films were deposited on Si （ 111 ） substrates by PLD method. During the deposition, the films were in situ investigated by RHEED instrument at 650℃ in vacuum. Combining with XRD analysis and PL analysis, we concluded that the structural and optical characteristics were improved evidently when the films were grown at or higher than 650℃.