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掺MgO和SrTiO3对PMN-PT-BT系铁电陶瓷材料介电性能的影响

Effects of MgO and SrTiO3 Doping on PMN-PT-BT Relaxant Ferro-Electric Ceramics
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摘要 采用二次预合成法制备了PMN-PT-BT弛豫铁电陶瓷材料,研究了添加MgO和SrTiO3对于PMN-PT-BT铁电陶瓷介电性能的影响。结果表明,上述两种掺杂物质均使PMN-PT-BT瓷体的居里峰宽化,向低温方向移动,介电温度特性比较好。添加10wt%的MgO和3wt%的SrTiO3,在1100℃的温度下烧结,可以获得性能为εγ=5650(20℃),△C/C(-30~+80℃)≤±159/6,tgδ=9×10^-4,Eb=6.2kV/mm的陶瓷电客器材料。 The PMN-PT-BT relaxant ferro-electric ceramics are prepared by the columbite precursor method,and the effects of MgO and SrTiO3 doping on dielectric have been investigated. The results indicate that these dopants mentioned above can make curie peak move to a lower temperature, the dissipation factor larger and the dielectric temperature charactertic is very good. When 10wt% of MgO and 3wt% of SrTiO3 added, materials of ceramic capacitors sintered at 110022 were obtained with properpties:εγ= 5650(20℃) ,△C/C(-30~+80℃)≤±15% ,tgδ=9×10^-4 ,Eb=6.2 kV/mm.
作者 吴从虎 王晓川 吕文中 WU cong-hu , WANG xiao-chuan , LU wen-zhong (Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074)
出处 《山东陶瓷》 CAS 2006年第5期7-10,共4页 Shandong Ceramics
关键词 铌镁酸铅 介电常数 掺杂 烧结 Lead Magnesium Niobate Dielectric Constant Doping Sintering
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