摘要
行波电极(Traveling wave electrode,TW),是目前广泛采用的一种电极结构,可缩短光载波与调制信号的互作用长度,可有效避免分布电容(Contribution capacity,CR)对调制带宽的限制。基于时域法设计、分析了InP／InGaAsP-EAM调制器行波电极,并与实际制作的EAM的行波型TW进行了特征阻抗Z_c、损耗系数α对比,结果表明用时域法设计、计算的TW的特征阻抗、损耗系数与实测的结果符合的较好,特征阻抗约为45Ω,在0～20 GHz的频率范围,损耗系数α小于4 dB／mm。
Traveling wave （TW） electrode structure is widely used for it needs less multi-action length between optical carrier and digital modulation and can get rid of contribution capacity＇s constraints on modulation bandwidth. Based on time domain method, TW electrode on InP/InGaAsP electronic absorption modulator is simulated, analyzed and compared with the fabrication on characteristic impedance Zc and loss coefficient α. The numeric results calculated by time domain method coincide with measurement well. Characteristic impedance is about 45 Ω, and the loss coefficient is less than 4 dB/mm from DC to 20 GHz.
出处
《量子电子学报》
CAS
CSCD
北大核心
2006年第6期881-885,共5页
Chinese Journal of Quantum Electronics
基金
"十五"863项目资助课题(2002AA31230)
关键词
光电子学
行波电极
时域法
特征阻抗
损耗系数
optoelectronics
traveling wave electrode
time-domain method
characteristic impedance
loss factor
