10—20MeV中子引起单粒子翻转能量沉积统计分析

Statistic Analysis of the Deposited Energy in Single Event Upset Induced by 10—20MeV Neutrons

基于Monte Carlo计算模拟,对10-20MeV中子引起存储器单粒子翻转能量沉积进行了统计分析,为了解单粒子翻转随机过程提供能量沉积统计信息．

Based on Monte Carlo simulations, the deposited energies in the single event upset induced by 10--20MeV neutrons in SRAM silicon chip are been statistically analysed. It can provide statistic information about the deposited energy for understanding the random process of the single event upset.