摘要
In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes.By varying density of energy,pulse number and width of the laser,the influence on morphology of the laser trenches of indium tin oxide and metal films are investigated.It is presented that uniform ablation trench can be obtained with 16 laser pulses at 0.15 J/cm^2 for aluminum film and 10 laser pulses at 0.65 J/cm^2 for indium tin oxide film.It is found that the characteristics of the organic light-emitting diodes prepared with laser ablation are almost the same as those of that prepared with conventional patterning method.
In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes. By varying density of energy,pulse number and width of the laser,the influence on morphology of the laser trenches of indium tin oxide and metal films are investigated. It is presented that uniform ablation trench can be obtained with 16 laser pulses at 0.15 J/cm^2 for aluminum film and 10 laser pulses at 0.65 J/cm^2 for indium tin oxide film. It is found that the characteristics of the organic light-emitting diodes prepared with laser ablation are almost the same as those of that prepared with conventional patterning method.
