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工作在动态阈值MOS的特性研究 被引量：2

Performance Study of MOS Working in Dynamic Threshold
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摘要 通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。 By tying gate and substrate of MOSFET together, a Dynamic Threshold MOS （DTMOS） is obtained. DTMOS has higher carrier mobility than the standard MOSFET. Furthermore,DTMOS threshold voltage drops when the gate voltage is raised,resulting in a much higher current drive than the standard device. In a word,DTMOS is a good candidate for very low voltage and low power.
作者 石立春
机构地区 西安通信学院
出处 《现代电子技术》 2006年第23期127-128,130,共3页 Modern Electronics Technique
关键词 动态阈值 工作特性 MOSFET 栅极 dynamic threshold performance study MOSFET gate
分类号 TN386.1 [电子电信—物理电子学]
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参考文献10

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同被引文献15

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现代电子技术
2006年 第23期

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