期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

工作在动态阈值MOS的特性研究 被引量：2

Performance Study of MOS Working in Dynamic Threshold
下载PDF
导出
摘要 通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。 By tying gate and substrate of MOSFET together, a Dynamic Threshold MOS （DTMOS） is obtained. DTMOS has higher carrier mobility than the standard MOSFET. Furthermore,DTMOS threshold voltage drops when the gate voltage is raised,resulting in a much higher current drive than the standard device. In a word,DTMOS is a good candidate for very low voltage and low power.
作者 石立春
机构地区 西安通信学院
出处 《现代电子技术》 2006年第23期127-128,130,共3页 Modern Electronics Technique
关键词 动态阈值 工作特性 MOSFET 栅极 dynamic threshold performance study MOSFET gate
分类号 TN386.1 [电子电信—物理电子学]
  • 相关文献

参考文献10

  • 1Koichi Nose,Masayuki Hirabayashi,Takayasu Sakurai.VTHHopping Scheme to Reduce Subthreshold Leakage for LowPower Processors[J].IEEE J.Solid-State Circuits,2002,37 (3):413-419.
  • 2Giustolisi G,Palumbo G,Criscione M,et al.A Low-Voltage Low-Power Voltage Reference Based on Subthreshold MOSFETs[J].IEEE J.Solid-State Circuits,2003,38 (1):151-154.
  • 3Rudenko T,Kilchytska V,Jean-Pierre Colinge.On the High -Temperature Subthreshold Slope of Thin-Film SOI MOSFETs.IEEE Electron Device Letters,2002,23 (3).
  • 4Jae-Joon Kim,Kaushik Roy.Double Gate-MOSFET Subthreshold Circuit for Ultralow Power Applications[J].IEEE Trans.Elec.Dev.,2004,51(9):1 468-1 474.
  • 5Aimad El Mourabit,Guo-Neng Lu,Patrick Patrick Pittet.Wide-Linear-Range Subthreshold OTA for Low-Power,Low-Voltage,and Low-Frequency Applications[J].IEEE Trans.Circuits Syst.I,Regular Papers,2005,52 (8):1 481 -1 488.
  • 6Assader F,Sinitsky D.Dynamic threshold-voltage MOSFET (DTMOS) for Ultra-low Voltage VLSI[J].IEEE Trans.Elec.,1997,44:414-421.
  • 7Soeleman H,Roy K,Paul B.Robust Subthreshold Logic for Ultra-Low Power Operation[J].IEEE Trans.Elec.VLSI Systems,2001,9(1):90-99.
  • 8Assaderaghi F.DTMOS:Its Derivatives and Variations and Their Potential Applications[C].The 12rd Intl Conf.on Microelectronics,2000:24-29.
  • 9Elgebaly M,Sachdev M.A Sub-0.5 V Dynamic Threshold PMOS(DTPMOS) Scheme for Bulk CMOS Technologies[C].The 13rd Intl.Conf.on Microelectronics,2001:9-10.
  • 10Elgharbawy W,Bayoumi M.B-DTNMOS:a Novel Bulk Dynamic Threshold NMOS Scheme[J].Proceedings of the 2004 International Symposium,2004,2:23-26.

同被引文献15

  • 1孟志鹏,张自成,杨汉武,钱宝良.半导体开关在脉冲功率技术中的应用[J].Chinese Physics C,2008,32(z1):277-279. 被引量：19
  • 2何锋,苏建仓,李永东,刘纯亮,孙鉴.半导体断路开关数值模拟[J].强激光与粒子束,2005,17(12):1893-1896. 被引量：6
  • 3刘健,张斌.SOS半导体断路开关器件研制和实验研究[J].电力电子技术,2006,40(5):130-132. 被引量：5
  • 4IIJIMA S.Helical microtubules of graphitic carbon[J].Nature,1991,354:56-58.
  • 5W A de Heer,CHATELAIN A,UGARTE D.A carbon nanotube field-emission electron source[J].Science,1995,270:1179-1180.
  • 6GAO Jin-hai,ZHANG Lan,ZHANG Bing-lin,et al.Fabrication of globe-like diamond microcrystalline aggregate films and investigation of their field emission properties[J].Thin Sold Film,2008,516(21),7807-7811.
  • 7DAI H,HAFNER J H,RINZLER A G,et al.Nanotubes as nanoprobes in scanning probe microscopy[J].Nature,1996,384:147-150.
  • 8EEN Y,SHEN Z.Synthesis of carbon nanocoils on surface morphology changed silicon substrates[J].Materials Letters,2001,39(15):2369-2386.
  • 9SATIO Y,YOSHIKAWA T.Bamboo-shaped carbon tube filled partially with nickel[J].Cryst.Growth,1993,134(1-2):154-156.
  • 10KAWASHIMA Y,KATEGIRI G.Raman spectra of highly oriented pyrolytic graphite[J].Phys.Rev.,1995,52:391-396.

引证文献2

二级引证文献2

现代电子技术
2006年 第23期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部