dU/dt引发的MOSFET误导通分析

Analysis of dU/dt Induced Spurious-Trigger of MOSFET

分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。

This paper has introduced the cause of spurious-trigger of MOSFET, which may punch through the MOS FET, even brings catastrophic results. The analysis takes into account the main parasitic components of device, package and circuit. By deriving the critical state of spurious-trigger explains which parameter may have the erroneous trigger and how to avoid them, finally we give a simulation results which shows good agreement with the theoretical expressions.