摘要
采用喇曼散射谱、扫描电子显微镜(SEM)和X-射线衍射(XRD)对掺磷硅薄膜的微结构进行了分析,并对掺杂前后薄膜的暗电导进行了测试,结果表明:掺磷后导致薄膜的非晶化。与本征氢化微硅晶(μc-Si:H)薄膜相比,掺杂后薄膜暗电导率略有降低,但降低的程度与具体的沉积条件有关。另外掺杂薄膜易进行快速光热退火晶化。
The structure characteristic, dopant concentration of the P-doped films are studied by Raman spectroscopy, scan electron microscope and Xray diffraction. Meanwhile the dark conductivity of intrinsic and doped films were also measured. It was shown that at same plasma condition, the structure of P doped silicon film conver- ted to amorphous structure, compared with intrinsic silicon film（μc St： H）, and the dark conductivity were de creased also. In addition, doped film was easily recrystallization by rapid photo thermal annealing
出处
《压电与声光》
CSCD
北大核心
2006年第6期733-735,共3页
Piezoelectrics & Acoustooptics
关键词
微晶硅
暗电导
晶化率
microcrystalline silicon
dark conductivity
crystalline volume fraction
