摘要
用分子束外延法在ＧａＡｓ（１００）衬底上生长了高质量的四元合金Ｚｎ（１－ｘ）ＭｇｘＳｙＳｅ（１－ｙ）薄膜．在对所生长的样品进行俄歇电子能谱、Ｘ射线衍射和喇曼散射研究后，提出了一种确定四元合金Ｚｎ（１－ｘ）ＭｇｘＳｙＳｅ（１－ｙ）组分的方法，即：利用ＺｎＳｙＳｅ（１－ｙ）和化学配比的ＭｇＳｅ作为标准样品，通过Ｘ射线衍射和喇曼散射测得标准样品ＺｎＳｙＳｅ（１－ｙ）中的Ｓ组分，再根据ＺｎＳｙＳｅ（１－ｙ）和ＭｇＳｅ的俄歇谱图，对各元素的相对灵敏度因子进行修正，然后利用相对灵敏度因子法比较精确地走出四元合金Ｚｎ（１－ｘ）ＭｇｘＳｙＳｅ（１－ｙ）的组分．
Abstract High quality quaternary alloy Zn1-xMgxSySe1-y films have been grown by Molecular Beam Epitaxy(MBE) on GaAs(100) substrate. Based on the investigation of the samples by Auger electron Spectroscopy(AES), X-ray Diffraction(XRD) and Raman Scattering(RS), a simple method to determine the composition of quaternary alloy has been set forth. The method of relative sensitivity factor of AES is used to accurately determine the composition of the quaternary ahoy Zn1-xMgxSySe1-y by calibrating the values of relative sensitivity factors of every element through the techniques of XRD and RS.
