摘要
使用普通Ｐ型硅片，用全扩散工艺制作ＭＣＴ．除开通与关断ＭＯＳ外，全部器件用常规晶闸管工艺制造．试制品主要电特性达到设计要求，说明了利用全扩散工艺制造ＭＣＴ的可行性．文中讨论了适合于全扩散工艺的器件结构设计思路，报道了样品的测试结果，并对试制工作进行了简单分析．
Abstract MCT device samples have been successfully fablicated by a complete diffusion technology in P-type silicon wafers. The main part of the fabrication process is compatible with the commonly used technology for thyristor manufactures. The feasibility of the complete diffusion technology is demonstrated by the samples' main characteristics which meets the device ratings designed. Considerations in design of the MCT device structure is discussed in accordance with the complete diffusion technology. A brief analysis on the testing work is reported as well as the measured sample's properties.
基金
国家"八五"重大攻关项目
国家计委的资助
