摘要
本文利用卢瑟福背散射及沟道（ＲＢＳ／Ｃ）技术，二次离子质谱（ＳＩＭＳ）技术等研究了ＭｅＶＳｉ离子束轰击对ＢＦ２注入Ｓｉ样品特性的影响．结果表明，退火后在ＢＦ２注入形成的ＰＮ结结区内仍有大量的二次缺陷．退火前附加一次ＭｅＶＳｉ离子轰击可以有效地消除ＢＦ２注入区内的二次缺陷，抑制Ｂ原子的扩散，并提高Ｂ原子的电激活率．
Abstract The effects of the additional MeV Si+ ion irradiation on the properties of 50keV BF2 ion implanted Si(100) have been studied. A noticeable reduction of the secondary de fects in the BF2 damaged region was observed when a buried amorphous layer was formed by an additional irradiation of 1.OMeV Si+ ions prior to thermal annealing. As for the electrical properties of the BF2 doped layer, it is found that MeV Si+ ion irradiation induces a broader profile of the carrier concentration and a higher electrical activation of B atoms,while the diffusion of B atoms is reduced.
