空间辐射效应对SRAM型FPGA的影响

Radiation Effect to SRAM-based FPGA in Space

以Xilinx的FPGA为例,结合相关试验数据,分析了空间总剂量效应、单粒子翻转、单粒子闩锁、单粒子功能中断、单粒子烧毁、单粒子瞬态脉冲和位移损伤等辐射效应对SRAMFPGA器件的漏极电流、阈值电压、逻辑功能等影响,分析了辐射效应的机理以及FPGA的失效模式。文章可以为SRAM型FPGA在航天领域中的应用提供参考。

SRAM-based field programmable gate array（FPGA ） of Xilinx Co. is taken as an example in the paper. Total ionizing dose effect, single event upset, single event latch, single event function interrupt, single event burnout, single event transient and displacement damage are analyzed based on some experiment data. The radiation effect to FPGA＇s drain current, gate voltage and logic function are also given. Because of the introduction to FPGA＇s fault reason and fault mode induced by radiation the paper can serve as reference to SRAM-based FPGA design in aerospace application.