摘要
研究了a-SiN:H的退火行为及其作为栅介质使用时,退火对a-Si:HTFT工作特性和可靠性的影响.实验事实表明,在380℃以下的退火处理使a-SiN:H介电常数的变化呈单调上升趋势,对a-Si:HTFT的工作特性和可靠性有明显的改善,温度进一步升高时,介电常数减小,a-Si:HTFT特性变坏.
Abstract Annealing behaviour of a-SiN: H and its effects on the performances and the reliability of a-Si: H TFTs are discussed. The experimental results demonstrate that the dielectric constant of a-SiN: H goes up with increasing annealing temperature. An obvi ous improvement of the operation performances and the reliability of a-Si: H TFTs can be obtained by adopting the a-Si: H thin layers annealed at a temperature in the lower range.