摘要
研究了ａ－ＳｉＮ：Ｈ的退火行为及其作为栅介质使用时，退火对ａ－Ｓｉ：ＨＴＦＴ工作特性和可靠性的影响．实验事实表明，在３８０℃以下的退火处理使ａ－ＳｉＮ：Ｈ介电常数的变化呈单调上升趋势，对ａ－Ｓｉ：ＨＴＦＴ的工作特性和可靠性有明显的改善，温度进一步升高时，介电常数减小，ａ－Ｓｉ：ＨＴＦＴ特性变坏．
Abstract Annealing behaviour of a-SiN: H and its effects on the performances and the reliability of a-Si: H TFTs are discussed. The experimental results demonstrate that the dielectric constant of a-SiN: H goes up with increasing annealing temperature. An obvi ous improvement of the operation performances and the reliability of a-Si: H TFTs can be obtained by adopting the a-Si: H thin layers annealed at a temperature in the lower range.
