功率器件瞬态热特性的激光探针无损测试

Measurements of Transient Thermal Characteristics in Power Devices with a Noninvasive Laser Probe

报道了一种弱相于激光干涉测温方法．以１．３μｍＩｎＧａＡｓＰ半导体激光为微探针．实时测量了功率晶体管内部结点的瞬态热特性，该方法具有响应速度快、完全非侵人性、空间分辨率高、测温范围广等优点，适合于测试Ｓｉ、ＧａＡｓ、ＩｎＰ等材料的功率电子和光电子器件的瞬态热特性．

A low-coherence laser interferometry has been proposed to measure temperature of power devices. The transient thermal characteristic in power transistors has been measured in real time with a InGaAsP LD used as a microprobe. The experimental results show that this method is accurate and noninvasive. It also has the advantages of high spatial resolution, quick response speed, and a wide measuring range. It is applicable to power electronics and optoelectronics devices fabricated with Si, GaAs, and InP materials.