摘要
基于作者提出的改进应力分布力学模型得到了计算半导体异质结多层结构应力分布的公式．针对带缓冲层ＧａＡｌＡｓ可见光激光器计算得到的有源层应力可以很好地解释Ｓｈｉｍｉｚｕ等有关器件寿命的实验结果．分析并指出了一些文献中处理半导体异质结多层结构应力问题的不合理之处．
Abstract Based on our new mechanical model given in a previous publication,formulas for stress distribution in a mulltilayer structure are obtained. The calculated active layer stress for a practical GaAlAs visible laser with a buffer layer can well explain the improvement in operation life. The faults in some previous publication which'also deal with stress distribution in multilayer structures are pointed out.
