摘要
氮杂质在微氮直拉硅单晶中引入了不同于热施主（ＴＤ）和新施主（ＴＮＤ）的氮关施主（ＮＲＤ）（ｎｉｔｒｏｇｅｎ－ｒｅｌａｔｅｄｄｏｎｏｒ）．其形成于５００～９００℃，６００℃左右最为活跃．短时间热处理时，ＮＲＤ的形成与消除具有可回复性，并与氮—氮对的可逆变化──对应．随热处理时间的延长，可逆行为逐渐消失．硅中的氮最终固化于稳定的微沉淀态．
Abstract The nitrogen-related donor that differs from the thermal donor(TD) and new donor(TND) is induced by the nitrogen impurity in nitrogen-doped CZ-Si. It is generated between 500℃ and 900℃, and is most active around 600℃. During the early periods of heat-treatments, there is a reversible behavior of generation and dissociation of NRDs,and it corresponds to the change of N-N pair. During the longer periods of heat-treatments, the reversible behavior disappears, and the nitrogen in silicon is 'stabilized' in the heat-stable micro-precipitates.
基金
浙江大学硅材料国家重点实验室资助
关键词
掺杂
氮
硅单晶
Doping (additives)
Infrared instruments
Nitrogen
Single crystals
