摘要
本文详细介绍了在硅衬底上用ＳＯＬ－ＧＥＬ方法制备ＰＺＴ铁电薄膜电容的工艺步骤，对铁电薄膜进行了ＸＰＳ分析、表面形貌分析、ＸＲＤ分析，测量了铁电电容的电滞回线及Ｃ－Ｖ曲线，并分析了各种工艺条件对铁电薄膜性能的影响．
Abstract A method for depositing ferroelectric thin films of Ph (Zr0.47Ti0.53)O3 on platinized silicon by Sol-Gel technique is described. The ferroelectric thin film was investigated by XPS, SEM and XRD etc. and its hysteresis loop and C-V curve were measured by RT66A Standard Ferroelectric Meter. The effects of various processing parameters on the performance of the PZT capacitors are presented.
基金
国家自然科学基金
上海市应用物理中心基金
