摘要
本文报道ＩｎＡｓ／ＧａＡｓ自组织生长量子点结构中发光的温度特性．在１２～１５０Ｋ温度范围内，实验测得的ＩｎＡｓ激子发光能量随温度增加明显红移，其红移速率远大于ＩｎＡｓ带隙的温度关系，而光谱宽度则明显减小．这些结果表明ＩｎＡｓ量子点结构是一种强耦合系统，局域在ＩｎＡｓ量子点中的载流子波函数会相互交途、相互贯穿，从而增强了载流子的弛豫过程．
Abstract We report on the results of temperature-dependent photoluminescence in selforganized InAs quantum dots (QDs) grown on GaAs substrates. In the temperature range from 12 to 150K we observed a fast red-shift of exciton emission and an anomalous decrease of line width with increasing temperature. We believe that the unusual temperature behavior is typical characteristics of self-organized InAs QDs, resulting from the enhanced carrier relaxation process due to the spread and penetration of the wave functions of carriers in strongly-coupled InAs QDs.
基金
国家自然科学基金
国家攀登计划资助
