射频微波晶体管的发展现状及分析

Developing Status and Analysis of RF/Microwave Transistors

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摘要对当前各种类型射频微波晶体管的结构特点、性能和应用情况进行了分析和综述。对晶体管的发展历史进行了全面而细致的回顾,指明了今后射频微波晶体管的发展特点和发展趋势,得出了射频微波晶体管的选型原则。 The structural characteristics, performance and application of all kinds of RF/ microwave transistors were analyzed and summarized. The development of transistors was reviewed, and the developing characteristic and trend of RF/microwave transistors henceforth were designated. The rule of choosing RF/microwave transistors was given.

作者南敬昌黎淑兰刘元安唐碧华

机构地区北京邮电大学电信工程学院北京邮电大学电子工程学院

出处《半导体技术》 CAS CSCD 北大核心 2006年第12期887-891,共5页 Semiconductor Technology

基金国家自然科学基金资助项目(60573111)

关键词射频微波晶体管高电子迁移率晶体管 RF microwave FET HEMT

分类号 TN323.2 [电子电信—物理电子学]

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半导体技术

2006年第12期

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射频微波晶体管的发展现状及分析

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