摘要
综述了在等温、等压化学气相沉积(ICVI)工艺中前驱体种类、滞留时间(τ)、AS/Vr比、前驱体分压、沉积温度以及H2在热解炭沉积中的作用对C/C复合材料快速均匀致密化的影响,重点讨论了前驱体滞留时间(τ)的精确控制对ICVI的影响。指出滞留时间(τ)不宜过长,否则会导致扩散控制。另外还特别强调AS/Vr比控制着复杂的气相反应(均相反应)和表面反应(异相反应)之间的竞争过程,是调节其它参数的前提。
The influence of various precursors, residence time of the precursor, initial As/Vr ratio, partial pressure of the precursor, infiltration temperature and the role of hydrogen on rapid and uniform densification in ICVI process are reviewed respectively. The emphasis is put on residence time of the precursor and As/Vr ratio. The results show that the accurate control of residence time of precursor for ICVI is necessary, the interaction between homogeneous reaction and heterogeneous reaction depends on As/Vr ratio of perform, and others parameters, except for residence time of precursor and As/Vr ratio, are adjusted based on As/Vr ratio to optimize ICVI.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第12期87-91,共5页
Materials Reports
基金
国家杰出青年基金(50225210)
国家自然科学基金(50372050)资助
