摘要
针对工艺不稳定性所带来的三维互连电容模式提取耗时激增的问题,提出一种增量式快速模式建库方法·该方法基于直接边界元计算,在2个紧邻工艺变动组合计算中,仅对前一组合计算所得的系数矩阵与右端项作局部修改,并取经预测修正的结果作为初值迭代提取后一工艺变动组合的电容,有着很高的精度和较高的加速比·
To solve the large time-consuming problem induced by the instability of process in 3D interconnect capacitance extraction, we present an incremental library-building method. Based on the direct boundary element method, this method can re-utilize the previous computation results. In a series of adjacent variation parameter combinations, we just modify a small portion of the coefficients matrix and right hand side of previous combination, and use the previous solution after predictive modification as the iterative initial value of the latter combination＇s linear system to extract the capacitance. This method can achieve high precision and good acceleration.
出处
《计算机辅助设计与图形学学报》
EI
CSCD
北大核心
2006年第12期1837-1843,共7页
Journal of Computer-Aided Design & Computer Graphics
基金
国家自然科学基金(90407004)
国家"八六三"高技术研究发展计划(2004AA1Z1050)
关键词
VLSI
三维电容提取
工艺参数变动
直接边界元法
模式
建库
VLSI
3D capacitance extraction
process parameter variation
direct boundary element method
patterns
library-building
