摘要
介绍了红外探测器从分立型器件到集成化焦平面阵列的发展和“三代”探测器状况,比较了HgCdTe和A lGaAs/GaAs的各自特点,提出了发展成像传感器的建议。
The develop of separated detector into intergrated focal plane array and state of “three generations” detector are introduced. Each feature between HgCdTe and AIGaAs/GaAs are compared. A proposal of developing image sensor assembly is suggested.
出处
《激光与红外》
CAS
CSCD
北大核心
2006年第12期1099-1102,共4页
Laser & Infrared
关键词
红外探测器
焦平面阵列
发展评述
infrared detector
focal plane array
developing review
