四种新型D-A化合物的合成与光电性能研究

Synthesis and Photoelectric Property of Four New D-A Compounds

合成了H2Po-C70,H2Pp-C70,ZnPo-C70和ZnPp-C704种新型的D-A化合物;通过紫外-可见吸收光谱、红外光谱、质谱和元素分析等多种手段对其进行了表征.在光电化学电池中,在GaAs电极上测量了这4种D-A化合物的光伏效应(PVE).研究结果表明,H2P-C70/GaAs和ZnP-C70/GaAs电极的光生电压(ΔV)和光生电流(ΔI)比单纯的GaAs电极大得多,据此能够确定这4种D-A化合物具有优良的光电性能.

In the present work, four new D-A compounds, H2Po-C70, H2Pp-CTo, ZnPo-C70 and ZnPp-C70 were prepared by 1,3 dipolar cycloaddition reaction of C70. The new D-A compounds were characterized by UV-Vis, FTIR, ESI-MS, as well as elemental analysis. The results show that four novel types of covalently linked porphyrin-fullerene dyads were formed. The photovoltaic effect（PVE） of the new D-A compounds on GaAs electrode in electrochemical photovoltaic cell were measured. The results show that the values of ΔV and ΔI for H2P-C70/GaAs and ZnP-C70/GaAs electrode are much greater than those for pure GaAs electrode. So that the photoelectric properties for the new D-A compounds are excellent. In addition, the photoelectric property of a H2P-C70/GaAs and ZnP-C70/GaAs electrode is related to the thinkness of the sample film and the media.