磁控溅射制备PST薄膜的介电与铁电性能

Dielectric and Ferroelectric Characteristics of (Pb_(1-x)Sr_x)TiO_3 Thin Films Prepared by Magnetron Sputtering

（Pb1-xSrx）TiO3系铁电材料是一种互溶性较好的钙钛矿材料，本文采用磁控溅射法，在Si基底上成功地制备了结构致密、性能优良的PST铁电薄膜，其制备工艺可与Si微电子技术兼容。性能测试表明，其介电常数可达900，接近10^3量级，介电损耗较低，约在0．12-0．21之间（-10℃至60℃）。铁电性能也较好，其饱和极化强度可接近10μC／cm^2，矫顽场强约21kV／cm。

（Pb1-xSrx）TiO3（PST）ferroelectric thin films with good microstructures and characteristics were prepared successfully by magnetron sputtering. The PST thin films were compatible with the Si microelectronics fabrication. Its dielectrie constant can attain 900 and its dielcctrlc loss is low（about 0.12-0.21 between - 10℃to 60℃） .The saturation polarization intensity P, is near 10μC/cm^2 and Ec is about 21 kV/cm.