摘要
电流感应的磁化翻转效应是近年来继巨磁阻效应(GMR)和隧道磁阻效应(TMR)之后提出的一种nm尺度下新的自旋相关效应,在无外加磁场的情况下,垂直于铁磁层平面的自旋极化电流就能引起铁磁层的磁化翻转。该效应有望被用于制作新型的电流操纵磁存储器件。报道了该效应的理论和实验的研究进展。
A novel spin-dependent effect, current-induced magnetization switching (CIMS), was put forward in recent years after giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) effects. According to CIMS effect, the magnetization of ferromagnetic film can be switched by a spin-polarized current perpendicular to the film plane, without external magnetic field. Therefore, it is promising that a new type of magnetic random access memory operated only by current can be realized based on this effect. The progresses on its theories and experiments were introduced.
出处
《微纳电子技术》
CAS
2006年第12期553-557,581,共6页
Micronanoelectronic Technology
基金
清华大学基础研究重点基金资助项目(Jz2001010)
关键词
电流感应磁化翻转
自旋相关效应
赝自旋阀
current-induced magnetization switching
spin-dependent effect
pseudo-spin-valve