γ-LiAlO_2衬底上生长GaN的研究进展

Developments of GaN Grown on γ-LiAlO_2 Substrate

γ-LiAlO2与GaN的晶格失配很小,易于分离,在其(100)面上能生长出无极性的GaN,是一种很有希望的GaN衬底材料。结合γ-LiAlO2的基本性质,详细介绍了γ-LiAlO2衬底上用各种方法生长GaN的研究进展。

γ-LiAlO2 as a very promising substrate, shows small lattice mismatch with GaN and can separate from GaN easily. Most importantly, nonpolar M-plane GaN can be grown on γ-LiAlO2 （100） plane. Combined with basic properties of γ-LiAlO2 the research deyelopmants of GaN grown on γ-LiAlO2 substrate by different methods are reviewed in detail.