采用低温AlN插入层在氢化物气相外延中生长GaN膜

Growing GaN Film by Hydride Vapor Phase Epitaxy with Low Temperature AlN Interlayer

采用低温AlN插入层在氢化物气相外延(HVPE)设备中生长出高质量GaN膜。X射线衍射(XRD)测量发现,低温AlN插入层有助于提高GaN膜的结晶质量。低温(10K)光致发光(PL)谱测量表明,低温AlN插入层有助于释放GaN膜外延生长的应力。原子力显微镜(AFM)测量显示,GaN膜具有非常光滑的表面形貌,并估算出其位错密度约为3.3×108cm-2。

Thick GaN films were deposited by hydride vapor phase epitaxy（HVPE） on metal-organic chemical vapor deposition（MOCVD） GaN templates with low-temperature（LT） AIN interlayer. High resolution X-ray diffraction（HRXRD） showed that the crystalline quality of GaN layers was improved by using LT-AIN interlayer. The reduction of the stresses in the GaN layer was highlighted by low temperature （10 K） photoluminescence measurements. And the surface morphology of GaN film was characterized by atomic force microscopy （AFM） and its dislocation density was estimated about 3.3 ×10^8cm^-2.