IGCT器件制造中的阴极梳条成型技术

The Forming Technique of Cathode Fingers in the IGCT's Process

概述了电子器件中的各种硅刻蚀技术,提出了新的旋转喷射硅腐蚀方案,对2种酸腐蚀挖槽方法进行了试验对比。新方法应用于集成门极换相晶闸管(IGCT)器件的梳条成型工艺,获得精密的阴极图形,器件的开关性能优良。

It is reviewed various silicon etching methods for electronic devices. A new spin spray etching technique is presented and compared fully with the dipping techique. The new technique has been applied to the finger forming of IGCT, both the segments and the dynamic performance are excellent.