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低压降CMOS稳压器的电源噪声抑制分析

Analysis of Power Supply Rejection of Low Dropout CMOS Regulator
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摘要 通过对低压降CMOS稳压器工作原理的分析,给出了一种频域分析模型。基于此模型,对低压降稳压器的电源噪声抑制进行了分析和研究,得到了低压降稳压器在频域的传递函数;依据此传递函数,给出了改善电源噪声抑制的方法。此外,给出了几种有效提高电源噪声抑制的方法和电路。 A frequency domain analytical model is given based on the operational principle of low dropout CMOS regulator. And the power supply rejection （PSR） of low dropout regulator is analyzed and studied based on this model. The transfer function in frequency-domain is obtained, and methods to improve PSR are developed. Moreover, several other methods and circuits are described to improve PSR.
作者 胡建赟 何艳 黄晨灵 闵昊
机构地区 复旦大学专用集成电路与系统国家重点实验室
出处 《微电子学》 CAS CSCD 北大核心 2006年第6期714-717,共4页 Microelectronics
基金 国家高技术研究发展计划资助项目(2003AA1Z1280)
关键词 低压降稳压器 电源噪声抑制 电源管理系统 Low dropout regulator Power supply rejection Power management system
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献13

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共引文献28

微电子学
2006年 第6期

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