高压SOI-LDMOS截止频率研究

A Study on Cut-Off Frequency of High-Voltage SOI-LDMOS

建立了高压SOI-LDMOS截止频率ft的提取方法,并借助半导体器件专业软件Tsu-prem-4和Medici,对截止频率ft与栅源电压Vgs和漏源电压Vds的关系进行了分析;研究了栅氧化层厚度、漂移区注入剂量、SOI层厚度和场极板长度等四个关键参数对截止频率的影响;最后,提出了提高SOI-LDMOS截止频率的方法。

The method to extract cut off frequency of high-voltage SOI-LDMOS has been established. Relationship of cut-off frequency of SOI-LDMOS with the gate-source voltage and the drain-source voltage were analyzed using Tsuprem-4 and Medici. Effects of gate oxide thickness, drift-region implant-dose, SOI thickness and fieldplate length on cut-off frequency were discussed in detail. A method to improve cut-off frequency of SOI-LDMOS was also proposed.