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一种用于负LDO稳压器的高精度带隙基准源 被引量:2

A High-Precision Bandgap Reference Source for Negative LDOs
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摘要 介绍了一种高精度带隙基准电路结构。采用二阶曲率补偿技术,通过增加一正温度系数项,补偿电路中Vbe(T)展开的负温度系数对数项,改善了基准电压源的温度稳定性。应用该基准电路,设计了一个负输出低压差(LDO)线性稳压器,用高压BIPIC工艺进行流片。测试结果显示,该负LDO线性稳压器的温度系数为85 ppm/℃,线性调整率≤0.02%/V,负载调整率≤0.2%。 A high-precision bandgap reference circuit topology has been developed. Using 2nd-order curvature compensation technique, temperature performance of the voltage reference has been improved by compensating the negative temperature dependence of the logarithmic term in Vbr (T) with a positive term. A negative low drot-out linear regulator is designed with the bandgap reference, and implemented in high voltage BIPIC process. Test results show that the negative LDO has a temperature coefficient of 85 ppm/℃, a max line regulation of 0.02%/V and a max load regulation of 0.2 %.
出处 《微电子学》 CAS CSCD 北大核心 2006年第6期754-758,共5页 Microelectronics
关键词 高精度带隙基准源 曲率补偿 负输出低压差线性稳压器 High-precision bandgap reference source Curvature compensation Negative LDO regulator
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参考文献5

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同被引文献18

  • 1肖明,吴玉广,唐华,张上洋.一种低压低温漂的CMOS带隙基准源[J].微计算机信息,2006(11Z):304-306. 被引量:2
  • 2马超,刘永根,薛卫东,张波.一种高温段指数曲率补偿电压基准源[J].微电子学,2007,37(3):436-439. 被引量:9
  • 3RAZAVI B.模拟CMOS 集成电路设计[M].北京:清华大学出版社,2005:309-329.
  • 4LEUNG K N,MOK P K T,LEUNG C Y.A 2-V 23 μA 5.3 ppm/℃ curvature-compensated MOS bandgap voltage reference[J].IEEE J Sol Sta Circ,2003,38(3):561-564.
  • 5BRazavi.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智.等译.西安:西安交通大学出版社,2002.
  • 6ANDREOU C M, KOUDOUNAS S, GEORGIOUS J. A novel wide-temperature-range, 3.9 ppm/℃ CMOS bandgap reference circuit [J]. IEEE Journal of Solid-state circuits, 2012, 2: 574- 581.
  • 7GIUSTOLISI G, PALUMBO G, CRISCIONE M, et al. A low- voltage low- power voltage reference based on subthreshold MOSFETs [J]. IEEE Solid-State Circuits, 2003, 1 : 151-154.
  • 8KOUDOUNAS S, ANDREOU C, GEORGIOU J. A novel MOS bandgap reference circuit with improved high-order tem- perature compensation [C]// Proceedings of 2010 IEEE Interna- tional Symposium on Circuits and Systems. [S.1.]: IEEE, 2010: 26-35.
  • 9LI Jing-hu, ZANG Xing-bao, YU Ming-yan. A 1.2-V piece- wise curvature-corrected bandgap reference in 0.5μm CMOS process [J]. IEEE Transactions on Very Large Scale Integr. Syst., 2011, 6: 1118-1122.
  • 10郭美洋,姚建军,孙克.一种曲率补偿CMOS带隙基准源的设计[C]//2010年全国半导体器件技术研讨会论文集.北京:中国半导体行业协会,2010:4-7.

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